march 2006 rev 1 1/8 8 STTH6112TV ultrafast recovery - 1200 v diode main product characteristics features and benefits ultrafast, so ft recovery very low conduction and switching losses high frequency and/or high pulsed current operation high reverse voltage capability high junction temperature insulated package: electrical insulation = 2500 v rms capacitance < 45 pf description the high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. these characteristics make it ideal for heavy duty applications that demand long term reliability. such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. these diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. the improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. order codes i f(av) 2 x 30 a v rrm 1200 v t j 150 c v f (typ) 1.30 v t rr (typ) 45 ns part number marking STTH6112TV1 STTH6112TV1 STTH6112TV2 STTH6112TV2 k2 k1 a2 a1 k2 k1 a2 a1 a1 a2 k1 k2 a1 a2 k1 k2 STTH6112TV2 STTH6112TV1 isotop www.st.com
characteristics STTH6112TV 2/8 1 characteristics when the diodes are used simultaneously: ? t j(diode1) = p (diode1) x r th(j-c) (per diode) + p (diode2) x r th(c) to evaluate the conduction losses use the following equation: p = 1.60 x i f(av) + 0.012 i f 2 (rms) table 1. absolute ratings (limiting values per diode at 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 1200 v i f(rms) rms forward current 100 a i f(av) average forward current, = 0.5 t c = 70 c per diode 30 a i frm repetitive peak forward current t p = 5 s, f = 5 khz square 300 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 250 a t stg storage temperature range -65 to + 150 c t j maximum operating junction temperature 150 c table 2. thermal parameters symbol parameter value unit r th(j-c) junction to case per diode 1.16 c/w total 0.63 r th(c) coupling thermal resistance 0.1 table 3. static electrical characteristics symbol parameter test conditions min. typ max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm 20 a t j = 125 c 15 150 v f (2) forward voltage drop t j = 25 c i f = 25 a 2.10 v t j = 125 c 1.25 1.90 t j = 150 c 1.20 1.80 t j = 25 c i f = 30 a 2.25 t j = 125 c 1.35 2.05 t j = 150 c 1.30 1.95 1. pulse test: t p = 5 ms, < 2 % 2. pulse test: t p = 380 s, < 2 %
STTH6112TV characteristics 3/8 table 4. dynamic characteristics symbol parameter test conditions min. typ max. unit t rr reverse recovery time i f = 1 a, di f /dt = -50 a/s, v r = 30 v, t j = 25 c 115 ns i f = 1 a, di f /dt = -100 a/s, v r = 30 v, t j = 25 c 57 80 i f = 1 a, di f /dt = -200 a/s, v r = 30 v, t j = 25 c 45 65 i rm reverse recovery current i f = 30 a, di f /dt = -200 a/s, v r = 600 v, t j = 125 c 25 35 a s softness factor i f = 30 a, di f /dt = -200 a/s, v r = 600 v, t j = 125 c 1.5 t fr forward recovery time i f = 30 a di f /dt = 100 a/s v fr = 1.5 x v fmax , t j = 25 c 550 ns v fp forward recovery voltage i f = 30 a, di f /dt = 100 a/s, t j = 25 c 6v figure 1. conduction losses versus average current figure 2. forward voltage drop versus forward current p(w) 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 i (a) f(av) =0.05 =0.1 =0.2 =0.5 =1 t =tp/t tp i (a) fm 0 20 40 60 80 100 120 140 160 180 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t j = 25 c (maximum values) t j =150c (maximum values) t j =150c (maximum values) t j =150c (typical values) t j =150c (typical values) v (v) fm
characteristics STTH6112TV 4/8 figure 3. relative variation of thermal impedance junction to case versus pulse duration figure 4. peak reverse recovery current versus di f /dt (typical values) z/r th(j-c) th(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 single pulse t (s) p i (a) rm 0 5 10 15 20 25 30 35 40 45 50 55 60 0 50 100 150 200 250 300 350 400 450 500 v r =600v t j =125c i f = 2 x i f(av) i f = i f(av) i f = i f(av) i f =0.5 x i f(av) i f =0.5 x i f(av) di /dt(a/s) f figure 5. reverse recovery time versus di f /dt (typical values) figure 6. reverse recovery charges versus di f /dt (typical values) t (ns) rr di /dt(a/s) f 200 300 400 500 600 700 800 0 50 100 150 200 250 300 350 400 450 500 v r =600v t j =125c i f =0.5 x i f(av) i f = 2 x i f(av) i f =i f(av ) i f =i f(av ) q (c) rr 0 1 2 3 4 5 6 7 8 0 50 100 150 200 250 300 350 400 450 500 i f =0.5 x i f(av) i f = i f(av) i f = 2 x i f(av) v r =600v t j =125c di /dt(a/s) f figure 7. softness factor versus di f /dt (typical values) figure 8. relative variations of dynamic parameters versus junction temperature s factor 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200 250 300 350 400 450 500 i f = 2 x i f(av) v r =600v t j =125c di /dt(a/s) f 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 25 50 75 100 125 i rm q rr s factor i f = i f(av) v r =600v reference: t j =125c t rr t rr t (c) j
STTH6112TV characteristics 5/8 figure 9. transient peak forward voltage versus di f /dt (typical values) figure 10. forward recovery time versus di f /dt (typical values) table 5. junction capacitance versus reverse voltage applied (typical values) v (v) fp 0 5 10 15 20 25 30 0 100 200 300 400 500 i f = i f(av) t j =125c di /dt(a/s) f t (ns) fr 200 300 400 500 600 700 800 900 1000 1100 0 100 200 300 400 500 i f = i f(av) v fr = 1.5 x v f max. t j =125c di /dt(a/s) f c(pf) 10 100 1000 1 10 100 1000 f=1mhz v osc =30mv rms t j =25c v (v) r
package information STTH6112TV 6/8 2 package information epoxy meets ul94, v0 cooling method: by conduction (c) in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com. table 6. isotop dimensions ref. dimensions millimeters inches min. max min. max. a 11.80 12.20 0.465 0.480 a1 8.90 9.10 0.350 0.358 b 7.8 8.20 0.307 0.323 c 0.75 0.85 0.030 0.033 c2 1.95 2.05 0.077 0.081 d 37.80 38.20 1.488 1.504 d1 31.50 31.70 1.240 1.248 e 25.15 25.50 0.990 1.004 e1 23.85 24.15 0.939 0.951 e2 24.80 typ. 0.976 typ. g 14.90 15.10 0.587 0.594 g1 12.60 12.80 0.496 0.504 g2 3.50 4.30 0.138 0.169 f 4.10 4.30 0.161 0.169 f1 4.60 5.00 0.181 0.197 p 4.00 4.30 0.157 0.69 p1 4.00 4.40 0.157 0.173 s 30.10 30.30 1.185 1.193 f1 f d1 g d s b e1 g1 ?p p1 e e2 g2 c c2 a1 a
STTH6112TV ordering information 7/8 3 ordering information 4 revision history part number marking package weight base qty delivery mode STTH6112TV1 STTH6112TV1 isotop 27 g 10 tube STTH6112TV2 STTH6112TV2 isotop 27 g 10 tube date revision description of changes 02-mar-2006 1 first issue.
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